STMicroelectronics STB120N4F6
The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.| Part No. | STB120N4F6 |
|---|---|
| Datasheet | STB120N4F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STB120N4F6 STD120N4F6 VDS 40 V 40 V RDS(on) max. 4 mΩ 4 mΩ ID 80 A 80 A● Designed for automotive applications and AEC-Q101 qualified
● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% RU * Application
● Switching applications
DESCRIPTION
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. 6 $0 Y Order codes STB120N4F6 STD120N4F6 Table 1. Device summary Marking Package 120N4F6 D²PAK DPAK September 2015 This is information on a product in full production. DocID17042 Rev 6 Pac
