STB120N4F6
STB120N4F6 is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
Order codes STB120N4F6 STD120N4F6
VDS 40 V 40 V
RDS(on) max. 4 mΩ 4 mΩ
ID 80 A 80 A
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Figure 1. Internal schematic diagram
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Application
- Switching applications
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STrip FET™ Deep GATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
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Order codes STB120N4F6 STD120N4F6
Table 1. Device summary
Marking
Package
120N4F6
D²PAK DPAK
September 2015
This is information on a product in full production.
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