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STB6NK90ZT4 - N-channel Power MOSFET

General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order codes VDS STB6NK90ZT4 STP6NK90Z STP6NK90ZFP 900 V STW7NK90Z.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Zener-protected RDS(on)max. 2Ω ID 5.8 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH™ Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packages TAB 3 1 D2PAK TAB TO-220 1 2 3 3 2 1 TO-220FP TO-247 3 2 1 D(2, TAB) G(1) S(3) AM01475V1 Product status STB6NK90ZT4 STP6NK90Z STP6NK90ZFP STW7NK90Z Features Order codes VDS STB6NK90ZT4 STP6NK90Z STP6NK90ZFP 900 V STW7NK90Z • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Zener-protected RDS(on)max. 2Ω ID 5.8 A Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.