STD110N8F6 Datasheet | STMicroelectronics

N-channel 80 V, 0.0056 Ω typ.,80 A, STrip FET™ F6 Power MOSFET in a DPAK package - production data Features Order code VDS RDS(on)max ID PTOT 7$% STD110N8F6 80 V 0.0065 Ω 80 A 167 W '3$. Figure 1. Internal schematic diagram '7$% - - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss Applications - Switching applications Description This device is an N-channel Power MOSFET developed using the STrip FET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 Order code STD110N8F6 $0Y Table 1. Device summary Marking Package 110N8F6 DPAK Packing Tube December 2014 This is information on a product in full production. Doc ID027274 Rev...