STMicroelectronics STD110N8F6
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STD110N8F6 |
|---|---|
| Datasheet | STD110N8F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on)max ID PTOT 7$% STD110N8F6 80 V 0.0065 Ω 80 A 167 W '3$. Figure 1. Internal schematic diagram ' 7$% *● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
6 Order code STD110N8F6 $0 Y Table 1. Device summary Marking Package 110N8F6 DPAK Packing Tube December 2014 This is information on a product in full production. DocID027274 Rev 1 1/16 Contents Contents STD110N8F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical
