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STD120N4F6 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • Order codes STB120N4F6 STD120N4F6 VDS 40 V 40 V RDS(on) max. 4 mΩ 4 mΩ ID 80 A 80 A.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB120N4F6, STD120N4F6 Automotive-grade N-channel 40 V, 3.5 mΩ typ., 80 A STripFET™ F6 Power MOSFETs in DPAK and D²PAK packages Datasheet - production data TAB 3 1 DPAK TAB 3 1 D²PAK Features Order codes STB120N4F6 STD120N4F6 VDS 40 V 40 V RDS(on) max. 4 mΩ 4 mΩ ID 80 A 80 A • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Figure 1. Internal schematic diagram ' 7$%RU *  Application • Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.