Datasheet4U Logo Datasheet4U.com

STD3PK50Z - P-CHANNEL MOSFET

General Description

This device is a P-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout.

Key Features

  • Order code VDSS RDS(on)max ID PTOT STD3PK50Z 500 V < 4Ω 2.8 A 70 W.
  • Gate charge minimized.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Very low intrinsic capacitance.
  • Improved ESD capability.

📥 Download Datasheet

More Datasheets from STMicroelectronics

Part Number Description
STD3PS25 P-CHANNEL MOSFET
STD3PS25-1 P-CHANNEL MOSFET
STD30N10F7 N-CHANNEL POWER MOSFET
STD30N6LF6AG N-CHANNEL POWER MOSFET
STD30NF03LT N-Channel MOSFET
STD30NF04LT N-channel Power MOSFET
STD30NF06LAG N-CHANNEL POWER MOSFET
STD30PF03L-1 P-channel Power MOSFET
STD30PF03LT4 P-channel Power MOSFET
STD35P6LLF6 P-CHANNEL POWER MOSFET

Full PDF Text Transcription for STD3PK50Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STD3PK50Z. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
STD3PK50Z P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS(on)max ID PTOT STD3PK50Z 500 V < 4Ω 2.8 A 70 W ■ Gate charge minimized ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Very low intrinsic capacitance ■ Improved ESD capability Applications ■ Switching applications Description This device is a P-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. TAB 3 1 DPAK Figure 1.