STD3PK50Z Description
This device is a P-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Internal schematic diagram or TAB Table.
STD3PK50Z Key Features
- Gate charge minimized
- Extremely high dv/dt capability
- 100% avalanche tested
- Very low intrinsic capacitance
- Improved ESD capability