Datasheet Details
| Part number | STD4NC50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 226.56 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD4NC50 Download (PDF) |
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Overview: N-CHANNEL 500V - 1.3Ω - 3.7A DPAK/IPAK PowerMesh™II MOSFET TYPE STD4NC50 STD4NC50-1 www.DataSheet4U.com s s s s s STD4NC50 STD4NC50-1 VDSS 500V 500V RDS(on) <1.5Ω <1.5Ω ID 3.7A 3.7A TYPICAL RDS(on) = 1.
| Part number | STD4NC50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 226.56 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD4NC50 Download (PDF) |
|
|
|
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
DPAK (NO SUFFIX) IPAK (SUFFIX“-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (*) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
| Part Number | Description |
|---|---|
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