STD4NC50 Datasheet | STMicroelectronics

N-CHANNEL 500V - 1.3Ω - 3.7A DPAK/IPAK Power Mesh™II MOSFET TYPE STD4NC50 STD4NC50-1 .. s s s s s STD4NC50 STD4NC50-1 VDSS 500V 500V RDS(on) <1.5Ω <1.5Ω ID 3.7A 3.7A TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 3 2 DESCRIPTION The Power MESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. DPAK (NO SUFFIX) IPAK (SUFFIX“-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES...