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STF11NM65N - N-channel MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology.

These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • 123 TO-220FP TO-2201 23 Order codes STF11NM65N VDS RDS(on) max. ID t(s) 123 I2PAKFP uc (TO-281) STFI11NM65N 650 V 455 mΩ 11 A STP11NM65N.
  • 100% avalanche tested d D(2, TAB).
  • Low input capacitance and gate charge ro.
  • Low gate input resistance te P.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF11NM65N, STFI11NM65N, STP11NM65N Datasheet N-channel 650 V, 425 mΩ typ., 11 A MDmesh II Power MOSFETs in TO-220FP, I²PAKFP and TO-220 packages TAB Features 123 TO-220FP TO-2201 23 Order codes STF11NM65N VDS RDS(on) max. ID t(s) 123 I2PAKFP uc (TO-281) STFI11NM65N 650 V 455 mΩ 11 A STP11NM65N • 100% avalanche tested d D(2, TAB) • Low input capacitance and gate charge ro • Low gate input resistance te P Applications ole G(1) • Switching applications bs Description O S(3) uct(s) - AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.