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STF14N80K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STF14N80K5 STFI14N80K5 VDS 800 V RDS(on) max. 0.445 Ω ID 12 A TO-220FP I2PAKFP (TO-281) Figure 1: Internal schematic diagram D(2).
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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STF14N80K5, STFI14N80K5 N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features Order code STF14N80K5 STFI14N80K5 VDS 800 V RDS(on) max. 0.445 Ω ID 12 A TO-220FP I2PAKFP (TO-281) Figure 1: Internal schematic diagram D(2)  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications G(1) S(3) Order code STF14N80K5 STFI14N80K5 AM15572v1_no_tab Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.