STF14N80K5 Overview
These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Device summary Marking Package Packing 14N80K5 TO-220FP I²PAKFP (TO-281) Tube December 2015 DocID027725.
STF14N80K5 Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected