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STFI12N60M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS RDS(on) max. ID PTOT STFI12N60M2 600 V 0.450 Ω 9 A 25 W.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription for STFI12N60M2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STFI12N60M2. For precise diagrams, and layout, please refer to the original PDF.

STFI12N60M2 N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in an I²PAKFP package Datasheet - production data Figure 1: Internal schematic diagram D(2) G(1) Fe...

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et - production data Figure 1: Internal schematic diagram D(2) G(1) Features Order code VDS RDS(on) max. ID PTOT STFI12N60M2 600 V 0.450 Ω 9 A 25 W • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

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