STFI5N80K5 Datasheet | STMicroelectronics

N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a I²PAKFP package - production data 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic diagram Features Order code STFI5N80K5 VDS 800 V RDS(on) max. 1.75 Ω ID 4A - Fully insulated and low profile package with increased creepage path from pin to heatsink plate - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STFI5N80K5 Table 1: Device summary Marking Package 5N80K5 I²PAKFP Packing Tube May 2016 Doc ID028510 Rev 2 This is...