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STGB35N35LZ Datasheet IGBT

Manufacturer: STMicroelectronics

General Description

This application specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.

Overview

STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ TAB 3 1 D²PAK TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1.

Key Features

  • Designed for automotive.