• Part: STGW25M120DF3
  • Description: 1200V 25A low-loss M series IGBT
  • Manufacturer: STMicroelectronics
  • Size: 664.08 KB
Download STGW25M120DF3 Datasheet PDF
STMicroelectronics
STGW25M120DF3
STGW25M120DF3 is 1200V 25A low-loss M series IGBT manufactured by STMicroelectronics.
Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package 3 2 1 TO-247 Features - Maximum junction temperature: TJ = 175 °C - 10 μs of short-circuit withstand time - Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A - Tight parameter distribution - Positive VCE(sat) temperature coefficient - Low thermal resistance - Soft- and fast-recovery antiparallel diode G(1) C(2, TAB) Applications - Industrial drives - UPS - Solar - Welding Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter...