STGW25M120DF3 - 1200V 25A low-loss M series IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGW25M120DF3
Manufacturer	STMicroelectronics
File Size	664.08 KB
Description	1200V 25A low-loss M series IGBT
Datasheet	STGW25M120DF3 Datasheet
Additional preview pages of the STGW25M120DF3 datasheet.

Product details

Description

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.Product status link STGW25M120DF3 Product summary Order

Features

Maximum junction temperature: TJ = 175 °C.
10 μs of short-circuit withstand time.
Low VCE(sat) = 1.85 V (typ. ) @ IC = 25 A.
Tight parameter distribution.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft- and fast-recovery antiparallel diode G(1) C(2, TAB).

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Published: Dec 11, 2019 |