Datasheet Details
| Part number | STGW25M120DF3 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 664.08 KB |
| Description | 1200V 25A low-loss M series IGBT |
| Datasheet |
 STGW25M120DF3 Datasheet
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General Description
NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
Key Features
- Maximum junction temperature: TJ = 175 °C.
- 10 μs of short-circuit withstand time.
- Low VCE(sat) = 1.85 V (typ. ) @ IC = 25 A.
- Tight parameter distribution.
- Positive VCE(sat) temperature coefficient.
- Low thermal resistance.
- Soft- and fast-recovery antiparallel diode G(1) C(2, TAB).