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STGW25M120DF3 - 1200V 25A low-loss M series IGBT

Product Overview

STMicroelectronics

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STGW25M120DF3 1200V 25A low-loss M series IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGW25M120DF3

Datasheet Details

Part number	STGW25M120DF3
Manufacturer	STMicroelectronics
File Size	664.08 KB
Description	1200V 25A low-loss M series IGBT
Datasheet	STGW25M120DF3 Datasheet
Additional preview pages of the STGW25M120DF3 datasheet.

Product details

Description

NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
10 μs of short-circuit withstand time.
Low VCE(sat) = 1.85 V (typ. ) @ IC = 25 A.
Tight parameter distribution.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft- and fast-recovery antiparallel diode G(1) C(2, TAB).

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Published: Dec 11, 2019 |