STMicroelectronics STGW25M120DF3
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.| Part No. | STGW25M120DF3 |
|---|---|
| Datasheet | STGW25M120DF3 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 25A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● 10 μs of short-circuit withstand time
● Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
● Tight parameter distribution
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Soft- and fast-recovery antiparallel diode G(1) C(2, TAB)
APPLICATIONS
● Industrial drives● UPS
● Solar
● Welding
DESCRIPTION
E(3) NG1E3C2T Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGW25M120DF3 Product summary Order code STGW25M120DF3 Marking G25M120DF3 Package TO-247 Packing Tube DS10300 - Rev 4 - November 2019 For further information contact your local STMicroelectronics sales office. STGW25M120DF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed coll...
