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STGWA60H65DFB - Trench gate field-stop IGBT

Download the STGWA60H65DFB datasheet PDF. This datasheet also covers the STGW60H65DFB variant, as both devices belong to the same trench gate field-stop igbt family and are provided as variant models within a single manufacturer datasheet.

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW60H65DFB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STGWA60V60DF 650V 60A IGBT
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Full PDF Text Transcription

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STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long leads 3 2 1 TO-3P Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High-frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
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