Datasheet Summary
Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode
Features
G(1)
C(2, TAB)
E(3)
Product status link STGWA60V60DWFAG
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tail-less switching current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
- Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration
Applications
- Automotive converters
- Totem-pole power factor correction
NG1E3C2T
Description
This device is an IGBT developed using an advanced...