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STGWA60V60DWFAG - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • G(1) C(2, TAB) E(3) Product status link STGWA60V60DWFAG.
  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
  • Tail-less switching current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Positive VCE(sat) temperature coefficient.
  • Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration.

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STGWA60V60DWFAG Datasheet Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode Features G(1) C(2, TAB) E(3) Product status link STGWA60V60DWFAG • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tail-less switching current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient • Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration Applications • Automotive converters • Totem-pole power factor correction NG1E3C2T Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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