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STGWA60V60DWFAG Datasheet IGBT

Manufacturer: STMicroelectronics

Overview: STGWA60V60DWFAG Datasheet Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC.

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • G(1) C(2, TAB) E(3) Product status link STGWA60V60DWFAG.
  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
  • Tail-less switching current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Positive VCE(sat) temperature coefficient.
  • Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration.

STGWA60V60DWFAG Distributor