STGWA60V60DWFAG Overview
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGWA60V60DWFAG Key Features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tail-less switching current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient