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STGWA60V60DF Datasheet 650v 60a IGBT

Manufacturer: STMicroelectronics

Overview: STGW60V60DF, STGWA60V60DF Datasheet Trench gate field-stop 650 V, 60 A high speed V series IGBT in a TO-247 and TO-247 long leads packages 3 2 1 TO-247 3 12 TO-247 long leads C(2, TAB) G(1) E(3).

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

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