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STGWA60V60DF - 650V 60A IGBT

Download the STGWA60V60DF datasheet PDF (STGW60V60DF-1 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650v 60a igbt.

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW60V60DF-1-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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STGW60V60DF, STGWA60V60DF Datasheet Trench gate field-stop 650 V, 60 A high speed V series IGBT in a TO-247 and TO-247 long leads packages 3 2 1 TO-247 3 12 TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
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