STH290N4F6-2AG Datasheet PDF (N-channel Power MOSFET) | Download STMicroelectronics STH290N4F6-2AG

STH290N4F6-2AG - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W.
Designed for automotive.

Datasheet Details

Part number	STH290N4F6-2AG
Manufacturer	STMicroelectronics
File Size	357.54 KB
Description	N-channel Power MOSFET
Datasheet	STH290N4F6-2AG Datasheet
Additional preview pages of the STH290N4F6-2AG datasheet.

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Full PDF Text Transcription

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STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Published: Mar 13, 2016 |