STL12P6F6 Datasheet | STMicroelectronics

P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package - production data Features Order code STL12P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V ID 3A 1 2 3 4 - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - High avalanche ruggedness - Low gate drive power losses PowerFLAT™ 5x6 Applications - Switching applications Figure 1. Internal schematic diagram 'ĆĆĆ Description This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. -...