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STL21N65M5 - N-channel Power MOSFET

General Description

The device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Figure 1.

Overview

www.DataSheet.co.kr STL21N65M5 N-channel 650 V, 0.175 Ω , 17 A PowerFLAT™ (8x8) HV ultra low gate charge MDmesh™ V Power.

Key Features

  • Type STL21N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.190 Ω ID 17 A (1) ' $ 3 3 3 ".