Datasheet4U Logo Datasheet4U.com

STL6N2VH5 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology.

The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.

Table 1.

Key Features

  • Order code VDSS STL6N2VH5 20 V.
  • RDS(on) max. ID PTOT 1 2 3 0.03 Ω (VGS=4.5 V) 6 A 2.4 W 0.04 Ω (VGS=2.5 V) 1 2 3 6 5 4 Very low switching gate charge Very low thermal resistance Conduction losses reduced Switching losses reduced 2.5 V gate drive Very low threshold device PowerFLAT™ 2x2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STL6NK55Z N-CHANNEL POWER MOSFET ST Microelectronics
STL60N32N3LL Power MOSFETs ST Microelectronics
STL60NH3LL N-CHANNEL POWER MOSFET ST Microelectronics
STL6118 Fast Enable with Low Noise LDO Semtron
STL6118A 300mA Low Dropout Low Noise LDO Semtron

Other Datasheets by STMicroelectronics

Part Number Description
STL6N3LLH6 N-channel Power MOSFET
STL6NM60N N-channel Power MOSFET
STL60N10F7 N-CHANNEL POWER MOSFET
STL60P4LLF6 P-CHANNEL POWER MOSFET
STL62P3LLH6 P-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STL6N2VH5 N-channel 20 V, 0.025 Ω typ., 6 A STripFET™ V Power MOSFET in PowerFLAT™ 2x2 package Datasheet − preliminary data Features Order code VDSS STL6N2VH5 20 V ■ ■ ■ ■ ■ ■ RDS(on) max. ID PTOT 1 2 3 0.03 Ω (VGS=4.5 V) 6 A 2.4 W 0.04 Ω (VGS=2.5 V) 1 2 3 6 5 4 Very low switching gate charge Very low thermal resistance Conduction losses reduced Switching losses reduced 2.5 V gate drive Very low threshold device PowerFLAT™ 2x2 Applications ■ Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.