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STL6N2VH5 - N-channel Power MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology.

The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.

Table 1.

Features

  • Order code VDSS STL6N2VH5 20 V.
  • RDS(on) max. ID PTOT 1 2 3 0.03 Ω (VGS=4.5 V) 6 A 2.4 W 0.04 Ω (VGS=2.5 V) 1 2 3 6 5 4 Very low switching gate charge Very low thermal resistance Conduction losses reduced Switching losses reduced 2.5 V gate drive Very low threshold device PowerFLAT™ 2x2.

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Datasheet Details

Part number STL6N2VH5
Manufacturer STMicroelectronics
File Size 521.66 KB
Description N-channel Power MOSFET
Datasheet download datasheet STL6N2VH5 Datasheet
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Full PDF Text Transcription

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STL6N2VH5 N-channel 20 V, 0.025 Ω typ., 6 A STripFET™ V Power MOSFET in PowerFLAT™ 2x2 package Datasheet − preliminary data Features Order code VDSS STL6N2VH5 20 V ■ ■ ■ ■ ■ ■ RDS(on) max. ID PTOT 1 2 3 0.03 Ω (VGS=4.5 V) 6 A 2.4 W 0.04 Ω (VGS=2.5 V) 1 2 3 6 5 4 Very low switching gate charge Very low thermal resistance Conduction losses reduced Switching losses reduced 2.5 V gate drive Very low threshold device PowerFLAT™ 2x2 Applications ■ Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.
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