STL6N3LLH6 Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. D S 6(D) 5(D) 4(S) AM11269v1 Table.
STL6N3LLH6 Key Features
- 0.025 Ω (VGS=10 V) 6 A 2.4W 0.04 Ω (VGS=4.5 V)
- Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low