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STL6N3LLH6 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • Order code VDSS RDS(on) max. ID PTOT 1 2 3 STL6N3LLH6 30 V.
  • 0.025 Ω (VGS=10 V) 6 A 2.4W 0.04 Ω (VGS=4.5 V) 1 2 3 6 5 4 RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ 2x2.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet — preliminary data Features Order code VDSS RDS(on) max. ID PTOT 1 2 3 STL6N3LLH6 30 V ■ ■ ■ ■ ■ 0.025 Ω (VGS=10 V) 6 A 2.4W 0.04 Ω (VGS=4.5 V) 1 2 3 6 5 4 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ 2x2 Applications ■ Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Switching application Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.