STP110N55F6 Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages. 6 $0Y Order code STP110N55F6 Table.
STP110N55F6 Key Features
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness