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STP110N55F6 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits a very low RDS(on) in all packages.

Table 1.

Key Features

  • TAB 3 2 1 TO-220 Order code STP110N55F6 VDS 55 V RDS(on) max. ID 5.2 mΩ 110 A.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP110N55F6 N-channel 55 V, 4.5 Ω typ., 110 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220 Order code STP110N55F6 VDS 55 V RDS(on) max. ID 5.2 mΩ 110 A • Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages. *  6  $0Y Order code STP110N55F6 Table 1. Device summary Marking Packages 110N55F6 TO-220 Packaging Tube July 2014 This is information on a product in full production. DocID019059 Rev 2 1/13 www.st.