STMicroelectronics STP110N55F6
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages.| Part No. | STP110N55F6 |
|---|---|
| Datasheet | STP110N55F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 3 2 1 TO-220 Order code STP110N55F6 VDS 55 V RDS(on) max. ID 5.2 mΩ 110 A● Low gate charge
● Very low on-resistance
● High avalanche ruggedness
APPLICATIONS
● Switching applications Figure 1. Internal schematic diagram ' 7$%DESCRIPTION
* 6 $0 Y Order code STP110N55F6 Table 1. Device summary Marking Packages 110N55F6 TO-220 Packaging Tube July 2014 This is information on a product in full production. DocID019059 Rev 2 1/13 Contents Contents STP110N55F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . .
