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STP120N4F6 - N-channel Power MOSFET

General Description

This device is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • Order code STP120N4F6 VDSS 40 V RDS(on) max. 4.3 mΩ 1. Current limited by package.
  • Standard threshold drive.
  • 100% avalanche tested ID 80 A (1).

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STP120N4F6 N-channel 40 V, 3.8 mΩ , 80 A, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features Order code STP120N4F6 VDSS 40 V RDS(on) max. 4.3 mΩ 1. Current limited by package ■ Standard threshold drive ■ 100% avalanche tested ID 80 A (1) Application ■ Switching applications ■ Automotive Description This device is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!"OR ' Table 1. Device summary Order code STP120N4F6 Marking 120N4F6 3 !-V Package TO-220 Packaging Tube May 2011 Doc ID 018846 Rev 1 1/13 www.st.