STP120N4F6 Description
This device is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Internal schematic diagram $ 4!" OR ' Table.
STP120N4F6 Key Features
- Standard threshold drive
- 100% avalanche tested
- Switching