STP12N50M2 Datasheet | STMicroelectronics

N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package - preliminary data 7$% 72 Features Order code STP12N50M2 VDS 500 V RDS(on) max ID 0.38 Ω 10 A - Extremely low gate charge - Lower RDS(on) x area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener-protected Figure 1. Internal schematic diagram , TAB Applications - Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the pany's strip layout to yield one of the...