STMicroelectronics STP12N50M2
This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology.| Part No. | STP12N50M2 |
|---|---|
| Datasheet | STP12N50M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 500V 10A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB TO-220 1 23 D(2, TAB) Order code STP12N50M2 VDS 500 V RDS(on) max. 380 mΩ ID 10 A● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STP12N50M2 Product summary Order code STP12N50M2 Marking 12N50M2 Package TO-220 Packing Tube DS10386 - Rev 2 - March 2026 For further information, contact your local STMicroelectronics sales office. STP12N50M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
