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STP12N65M2 - N-Channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code STP12N65M2 VDS 650 V RDS(on) max. ID 0.50 Ω 8A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP12N65M2 N-channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a TO-220 package Datasheet - production data TAB TO-220 1 23 Figure 1: Internal schematic diagram Features Order code STP12N65M2 VDS 650 V RDS(on) max. ID 0.50 Ω 8A  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.