STMicroelectronics STP12N65M2
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.FEATURES
Order code STP12N65M2 VDS 650 V RDS(on) max. ID 0.50 Ω 8A● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Order code STP12N65M2 Table 1: Device summary Marking Package 12N65M2 TO-220 Packing Tube November 2017 DocID031324 Rev 1 This is information on a product in full production. 1/13 Contents Contents STP12N65M2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits .....................................................................................