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STP25N60M2-EP - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Features

  • Order code VDS at TJ max. RDS(on) max. STP25N60M2-EP 650 V 0.188 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STP25N60M2-EP

Datasheet Details

Part number STP25N60M2-EP
Manufacturer STMicroelectronics
File Size 251.91 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STP25N60M2-EP Datasheet
Additional preview pages of the STP25N60M2-EP datasheet.

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Full PDF Text Transcription

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STP25N60M2-EP Datasheet N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2, TAB) G(1) Features Order code VDS at TJ max. RDS(on) max. STP25N60M2-EP 650 V 0.188 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected Applications • Switching applications • Tailored for Very high frequency converters (f > 150 kHz) ID 18 A S(3) AM01475V1 Product status link STP25N60M2-EP Product summary Order code STP25N60M2-EP Marking 25N60M2EP Package TO-220 Packing Tube Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.
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