STP25NM50N Description
This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. 18 Contents STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Contents 1.
STP25NM50N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel