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STP25NM50N - N-channel Power MOSFET

General Description

This series of devices is realized with the second generation of MDmesh™ Technology.

This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STB25NM50N STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N VDSS (@Tjmax) 550V 550V 550V 550V 550V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 www.datasheet4u.com Second generation MDmesh™ Power MOSFET General features Type STB25NM50N STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N VDSS (@Tjmax) 550V 550V 550V 550V 550V RDS(on) <0.140Ω <0.140Ω <0.140Ω <0.140Ω <0.140Ω ID 3 3 22A 22A 22A(1) 22A 22A 1 2 1 2 TO-220FP 3 1 TO-220 D²PAK 3 12 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel I²PAK TO-247 Internal schematic diagram Description This series of devices is realized with the second generation of MDmesh™ Technology.