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STP77N6F6 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • Order code VDS RDS(on) max ID PTOT STP77N6F6 60 V 7.9 mΩ (VGS=10 V) 77 A 80 W.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.
  • Very low switching gate charge.

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Full PDF Text Transcription for STP77N6F6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP77N6F6. For precise diagrams, and layout, please refer to the original PDF.

STP77N6F6 N-channel 60 V, 6.6 mΩ typ., 77 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet — production data Features Order code VDS RDS(on) max ID PTO...

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Datasheet — production data Features Order code VDS RDS(on) max ID PTOT STP77N6F6 60 V 7.9 mΩ (VGS=10 V) 77 A 80 W ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' Table 1.

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