Datasheet Details
| Part number | STPSC31H12C-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 212.05 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet | STPSC31H12C-Y-STMicroelectronics.pdf |
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Overview: STPSC31H12C-Y Datasheet 2 X 15 A, 1200 V power Schottky silicon carbide diode A1 K A2 TO-247 A2 K A1 Product status link STPSC31H12C-Y Product summary IF(AV) 2 x 15 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.
| Part number | STPSC31H12C-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 212.05 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet | STPSC31H12C-Y-STMicroelectronics.pdf |
|
|
|
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Compare STPSC31H12C-Y distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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