STPSC31H12C-Y Description
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
STPSC31H12C-Y Key Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high-voltage periphery
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- ECOPACK 2 pliant