STPSC31H12C-Y datasheet by STMicroelectronics.
| Part number | STPSC31H12C-Y |
|---|---|
| Datasheet | STPSC31H12C-Y-STMicroelectronics.pdf |
| File Size | 212.05 KB |
| Manufacturer | STMicroelectronics |
| Description | power Schottky silicon carbide diode |
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The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
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