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STPSC6C065-Y - Automotive 650V power Schottky silicon carbide diode

General Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • AEC-Q101 qualified.
  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Dedicated to PFC.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC6C065-Y Automotive 650 V power Schottky silicon carbide diode $ . . 72$& $ . Features  AEC-Q101 qualified  No or negligible reverse recovery  Switching behavior independent of temperature  Dedicated to PFC applications  High forward surge capability  PPAP capable  ECOPACK®2 compliant component Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications.