STMicroelectronics STPSC6TH13TI
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC6TH13TI |
|---|---|
| Datasheet | STPSC6TH13TI Download |
| Manufacturer |  STMicroelectronics |
| Description | Dual 650V power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● No or negligible reverse recovery● Switching behavior independent of temperature
● Suited for specific bridge-less topologies
● High forward surge capability
● Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - production data
DESCRIPTION
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. . Table 1. Device summary (per diode) Symbol Value IF(AV) VRRM Tj (max.) 6A 650 V 175 °C January 2016 This is information on a product in full production. DocID024696 Rev 3 1/8 8 Characteristics 1 Characteristics STPSC6TH13TI Table 2.
