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STU65N3LLH5 - N-channel Power MOSFET

General Description

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit.

Figure 1.

Table 1.

Key Features

  • Type STD65N3LLH5 STU65N3LLH5 VDSS 30 V 30 V RDS(on) max 0.0069 Ω 0.0073 Ω ID 65 A 65 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • Very low switching gate charge.
  • High avalanche ruggedness.
  • Low gate drive power losses.

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STD65N3LLH5 STU65N3LLH5 N-channel 30 V, 0.0061 Ω, 65 A, DPAK, IPAK STripFET™ V Power MOSFET Features Type STD65N3LLH5 STU65N3LLH5 VDSS 30 V 30 V RDS(on) max 0.0069 Ω 0.0073 Ω ID 65 A 65 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit. 3 1 DPAK 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1.