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STW9NK95Z - N-channel MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • Type STW9NK95Z VDSS RDS(on) Max ID 950 V < 1.38 Ω 7 A Pw 160 W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW9NK95Z N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STW9NK95Z VDSS RDS(on) Max ID 950 V < 1.38 Ω 7 A Pw 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code STW9NK95Z Marking 9NK95Z Package TO-247 Packaging Tube July 2008 Rev 2 1/12 www.st.