Datasheet Details
| Part number | STWA60N043DM9 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 429.63 KB |
| Description | N-channel Power MOSFET |
| Download | STWA60N043DM9 Download (PDF) |
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Overview: STWA60N043DM9 Datasheet N-channel 600 V, 38 mΩ typ., 55 A MDmesh DM9 Power MOSFET in a TO-247 long leads package TO-247 long leads D(2, TAB) G(1) S(3).
| Part number | STWA60N043DM9 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 429.63 KB |
| Description | N-channel Power MOSFET |
| Download | STWA60N043DM9 Download (PDF) |
|
|
|
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode.
The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.
The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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