STMicroelectronics STWA60N043DM9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | STWA60N043DM9 |
|---|---|
| Datasheet | STWA60N043DM9 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 55A N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. ID STWA60N043DM9 600 V 43 mΩ 55 A● Fast-recovery body diode
● Worldwide best RDS(on) per area among silicon-based fast recovery devices
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
APPLICATIONS
● Power supplies and converters G(1)● LLC resonant converter
DESCRIPTION
S(3) AM01475v1_noZen The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STWA60N043DM9 Product summary Order code STWA60N043DM9 Marking 60N043DM9 Package TO-247 long leads Packing Tube DS14232 - Rev 4 - March 2024 For further information contact your local STMicroelectronics sales office. STWA60N043DM9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Paramet...
