STWA65N023M9 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STWA65N023M9 Datasheet N-channel 650 V, 19.9 mΩ typ., 95 A MDmesh M9 Power MOSFET in a TO‑247 long leads package TO-247 long leads D(2,.

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STWA65N023M9 n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STWA65N023M9
Manufacturer	STMicroelectronics
File Size	261.38 KB
Description	N-channel Power MOSFET
Download	STWA65N023M9 Download (PDF)

General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.

The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Key Features

Order code VDS RDS(on) max. ID STWA65N023M9 650 V 23.0 mΩ 95.
Worldwide best FOM RDS(on).
Qg among silicon-based devices.
Higher VDSS rating.
Higher dv/dt capability.
Excellent switching performance.
Easy to drive.
100% avalanche tested G(1) S(3).

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