STWA65N023M9 Overview
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast...
STWA65N023M9 Key Features
- Worldwide best FOM RDS(on)-Qg among silicon-based devices
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested