STMicroelectronics STWA65N023M9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | STWA65N023M9 |
|---|---|
| Datasheet | STWA65N023M9 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 92A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STWA65N023M9 650 V 23.0 mΩ 92● Worldwide best FOM RDS(on)*Qg among silicon-based devices
● Higher VDSS rating
● Higher dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested G(1) S(3)
APPLICATIONS
● High efficiency switching applications AM01475v1_noZenDESCRIPTION
The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product status link STWA65N023M9 Product summary Order code STWA65N023M9 Marking 65N023M9 Package Packing TO‑247 long leads Tube DS14036 - Rev 3 - July 2023 For further information contact your local STMicroelectronics sales office. STWA65N023M9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous...
