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STWA65N023M9 - N-channel Power MOSFET

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.

Features

  • Order code VDS RDS(on) max. ID STWA65N023M9 650 V 23.0 mΩ 95.
  • Worldwide best FOM RDS(on).
  • Qg among silicon-based devices.
  • Higher VDSS rating.
  • Higher dv/dt capability.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested G(1) S(3).

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Full PDF Text Transcription

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STWA65N023M9 Datasheet N-channel 650 V, 19.9 mΩ typ., 95 A MDmesh M9 Power MOSFET in a TO‑247 long leads package TO-247 long leads D(2, TAB) Features Order code VDS RDS(on) max. ID STWA65N023M9 650 V 23.0 mΩ 95 • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100% avalanche tested G(1) S(3) Applications • High efficiency switching applications AM01475v1_noZen Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.
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