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STWA65N60DM6 - N-channel Power MOSFET

Download the STWA65N60DM6 datasheet PDF. This datasheet also covers the STW65N60DM6 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.

Features

  • Order code VDS RDS(on) max. ID STW65N60DM6 STWA65N60DM6 600 V 71 mΩ 46 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STW65N60DM6-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription

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STW65N60DM6, STWA65N60DM6 Datasheet N-channel 600 V, 60 mΩ typ., 46 A MDmesh DM6 Power MOSFETs in a TO‑247 and TO‑247 long leads packages 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STW65N60DM6 STWA65N60DM6 600 V 71 mΩ 46 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.
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