STMicroelectronics STWA65N045M9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | STWA65N045M9 |
|---|---|
| Datasheet | STWA65N045M9 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 54A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. ID STWA65N045M9 650 V 45 mΩ 54 A● Worldwide best FOM RDS(on)*Qg among silicon-based devices
● Higher VDSS rating
● Higher dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested
APPLICATIONS
G(1)● High efficiency switching applications
DESCRIPTION
S(3) AM01475v1_noZen The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product status link STWA65N045M9 Product summary Order code STWA65N045M9 Marking 65N045M9 Package Packing TO‑247 long leads Tube DS14231 - Rev 3 - July 2024 For further information contact your local STMicroelectronics sales office. STWA65N045M9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source volta...
