SGK1314-60A
SGK1314-60A is Ku-Band Internally Matched GaN-HEMT manufactured by SUMITOMO.
Features
- High Output Power: Pout=48.0d Bm (Typ.)
- High Gain: GL=8.5d B (Typ.)
- High Power Added Efficiency: PAE=32% (Typ.)
- Broad Band: 13.75 to 14.5GHz
- Hermetically Sealed Package
- Description
The SGK1314-60A is a high power Ga N-HEMT that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
Item
Symbol
Drain-Source Voltage
VD S
Gate-Source Voltage
VG S
Total Power Dissipation
Storage Temperature
T s tg
Channel Temperature
Tch
Case Temperature
T c as e
Input Power
Pin
Rating 26
- 10 225
-55 to +125 +250
-40 to +125 <=46
REMENDED OPERATING CONDITION Item
Drain-Source Voltage Forward Gate Current Reverse Gate Current Channel Temperature
Symbol VD S IG F IG R Tch
Condition
Rg=51ohm Rg=51ohm
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item
Symbol
Condition
Saturated Drain Current Trans Conductance Pinch-off Voltage Frequency Range Output Power at Pin=43d Bm Linear Gain at Pin=27d Bm Power Gain at Pout=44.5d Bm Drain Current at Pin=43d Bm Power Added Efficiency at Pin=43d Bm Gain Flatness at Pin=27d Bm
3rd Order Intermodulation...