SGK1314-60B
SGK1314-60B is ku-Band Internally Matched GaN-HEMT manufactured by SUMITOMO.
Features
- Broad Band: 13.75 to 14.5GHz
- High Output Power: Pout=48d Bm (Typ.)
- Excellent IM3 with wide offset freq. : Δf=～250MHz
- Suitable for multi carrier signal
- Internally Matched
- Hermetically Sealed Package
- Description
The SGK1314-60B is a high power Ga N-HEMT that is internally matched for Ku-band Wide-VBW Application, and have good IMD performance at offset frequency up to 250MHz.
Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Casel Temperature Input Power
VG S PT T s tg Tch T c as e Pin
- 10 225 -55 to 125 250 -40 to 125 46
V W deg.C deg.C deg.C d Bm
REMENDED OPERATING CONDITION Item
Drain-Source Voltage Forward Gate Current Reverse Gate Current Channel Temperature
Symbol VD S IG F IG R Tch
Condition
Rg=51ohm Rg=51ohm
Limit <=24 <=20.2 >=- 6.4 <+193
Unit V m A m A deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Symbol
Condition
Saturated Drain Current Pinch-off Voltage Frequency Range Outpur Power at Pin=43d Bm Linear Gain at Pin=27d Bm Power Gain at Pout=44.5d Bm Drain Current at Pin=43d Bm Power Added Efficiency at Pin=43d Bm Gain Flatness at Pin=27d Bm
ID SS Vp f Pout GL GP ID SR PAE ⊿G
VD S =10V, VG S =0V VD S =10V, ID S =1.8m A VD S =24V- t yp. IDS(DC )=1.8A-typ. Vgs- c onst ant
Min.
- 13.75 47.0 7.5 6.0
- Limit Typ. 21.0
- 3.6
48.0 8.5 7.0 6.6 32
- Max.
- 14.5
- 9.1
- 1.6
Unit
A V GHz d Bm d B d B A % d B
3rd Order Inter modulation Distortion f=13.75,...
