SGK1314-60B Overview
Description
The SGK1314-60B is a high power GaN-HEMT that is internally matched for Ku-band Wide-VBW Application, and have good IMD performance at offset frequency up to 250MHz. Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Casel Temperature Input Power VG S PT T s tg Tch T c as e Pin - 10 225 -55 to 125 250 -40 to 125 46 V W deg.C deg.C deg.C dBm RECOMMENDED OPERATING CONDITION Item Drain-Source Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VD S IG F IG R Tch Condition Rg=51ohm Rg=51ohm Limit <=24 <=20.2 >=- 6.4 <+193 Unit V mA mA deg.C Item Symbol Condition Saturated Drain Current Pinch-off Voltage Frequency Range Outpur Power at Pin=43dBm Linear Gain at Pin=27dBm Power Gain at Pout=44.5dBm Drain Current at Pin=43dBm Power Added Efficiency at Pin=43dBm Gain Flatness at Pin=27dBm ID SS Vp f Pout GL GP ID SR PAE ⊿G VD S =10V, VG S =0V VD S =10V, ID S =1.8mA VD S =24V- t yp.
Key Features
- Broad Band: 13.75 to 14.5GHz
- High Output Power: Pout=48dBm (Typ.)
- Excellent IM3 with wide offset freq. : Δf=～250MHz
- Suitable for multi carrier signal
- Internally Matched
