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STS2601 - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -4.0A R DS(ON) (m Ω) Max 80 @ VGS=-4.5V 110 @ VGS=-2.5V SOT 26 Top View D D D G 1 2 3 6 5 4 D D S S G.

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Datasheet Details

Part number STS2601
Manufacturer SamHop Microelectronics
File Size 186.60 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STS2601 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS2601 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -20V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -4.0A R DS(ON) (m Ω) Max 80 @ VGS=-4.5V 110 @ VGS=-2.5V SOT 26 Top View D D D G 1 2 3 6 5 4 D D S S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage a ID www.DataSheet4U.com Drain Current-Continuous IDM PD TJ, TSTG -Pulsed b TA=25°C TA=70°C TA=25°C TA=70°C Limit -20 ±12 -4.0 -3.2 -16 2 1.