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S T S 2622
S amHop Microelectronics C orp. F eb,25 2005 V er1.1
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) Max
ID
2.5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
80 @ V G S = 4.5V 110 @ V G S = 2.5V
R ugged and reliable. TS OP 6 package.
D1 D2
TS OP 6 Top View
G1 S1 G2
1 2 3
6 5 4
D1 S2 D2
G1 S1
G2 S2
AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted)
P arameter Drain-S ource Voltage
www.DataSheet4U.com Gate-S ource Voltage
S ymbol V DS V GS ID IDM IS PD T J , T S TG
Limit 20 10 2.5 8 1.
STS2622 Datasheet
