STS2622 Overview
S T S 2622 S amHop Microelectronics C orp. F eb,25 2005 V er1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2.5A R DS (ON) S uper high dense cell design for low R DS (ON ). 80 @ V G S = 4.5V 110 @ V G S = 2.5V R ugged and reliable.