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S amHop Microelectronics C orp.
S T S 2611
F E B 25 2005
P -C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( m W ) Max
ID
-2.8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
90 @ V G S = -4.5V 150 @ V G S = -2.5V
R ugged and reliable. S OT-26 package.
1 2 5 6
TS OP 6 Top View
D
D D G
1 2 3
6 5 4
D D S G
3
4
S
AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted)
P arameter Drain-S ource Voltage
www.DataSheet4U.com Gate-S ource Voltage
S ymbol V DS V GS ID IDM IS PD T J , T S TG
Limit -20 12 -2.8 -11 -1.25 1.
STS2611 Datasheet
