The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
S T S 2621
S amHop Microelectronics C orp.
J un.6 2005
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( m W ) MAX
ID
-2A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
130 @ V G S = -4.5V 190 @ V G S = -2.5V TS OP 6 Top View
R ugged and reliable. S OT-26 P ackage.
D1 D2
G1 S1 G2
1 2 3
6 5 4
D1 S2 D2
G1 S1 G2 S2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage
www.DataSheet4U.com Gate-S ource Voltage
S ymbol V DS V GS ID IDM IS PD T J , T S TG
Limit -20 10 -2 -7 -1.