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Green Product
STS2622A
Ver 2.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
20V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
3.4A
R DS(ON) (m Ω) Max
60 @ VGS=4.5V 90 @ VGS=2.5V
SOT 26 Top View
D1
D2
G1 S2 G2
1 2 3
6 5 4
D1 S1 D2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 3.4 2.7 13.5
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.
STS2622A Datasheet
