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Gre r Pro
STS400
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
40V
ID
1.2A
R DS(ON) (m Ω) Max
350 @ VGS=10V 500 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
D S G
G
S OT -23
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
TA=25°C TA=70°C TA=25°C TA=70°C
Limit 40 ±20 1.2 0.96 4.5 1.25 0.
STS400 Datasheet
