N-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Green Product
S amHop Microelectronics C orp.
S T S 4300
AP R .25 2006
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S
( m Ω ) Max
ID
3.5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
62 @ V G S = 10V 80 @ V G S =4.5V
R ugged and reliable. S OT-23 package.
D
S OT-23
D S G
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
a
S ymbol V DS V GS 25 C 70 C ID IDM IS Ta= 25 C PD Ta=70 C
Limit 40 20 3.5 2.7 15 1.25 1.25 0.
STS4300 Datasheet
