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SC8100S - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND.

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Datasheet Details

Part number SC8100S
Manufacturer SamHop
File Size 141.54 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8100S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SC8100SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 2.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 4.6 @ VGS=4.5V 4.8 @ VGS=4.0V 12V 8A 4.9 @ VGS=3.8V 5.7 @ VGS=3.1V 7.1 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 2.55 0.03 8100S Date Code S1 S2 G1 G2 S1 S2 0.65 0.65 0.65 0.65 1-pin index mark S1 0.10 0.01 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 φ 0.