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SC8180S - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.88 0.03 8180S Date Code 1.88 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.100 0.010 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm.

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Datasheet Details

Part number SC8180S
Manufacturer SamHop
File Size 127.97 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8180S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SC8180SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.1 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 7.9 @ VGS=4.5V 8.3 @ VGS=4.0V 12V 5.5A 8.5 @ VGS=3.8V 9.7 @ VGS=3.1V 11.9 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.88 0.03 8180S Date Code 1.88 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.100 0.010 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 12 VGSS IS ISP Gate-Source Voltage Source Current-Continuous c -Pulsed a c ±8 5.5 55 PT Total Power Dissipation 1.