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SC8301 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.55 0.05 3.45 0.05 8301 Date Code Mark area 1-pin index mark S1 0.21 BOTTOM VIEW 0.65 S1 S2 S1 S2 G1 G2 S1 S2 S1 S2 0.65 0.65 0.65 0.65 φ 0.28 G1 : Gate 1 S1 : Source 1 G2 : Gate 2 S2 : Source 2 Unit : mm.

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Datasheet Details

Part number SC8301
Manufacturer SamHop
File Size 133.29 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8301 Datasheet

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Full PDF Text Transcription (Reference)

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Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8301 Ver 1.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 8.5 @ VGS=10V 30V 15A 12 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.55 0.05 3.45 0.05 8301 Date Code Mark area 1-pin index mark S1 0.21 BOTTOM VIEW 0.65 S1 S2 S1 S2 G1 G2 S1 S2 S1 S2 0.65 0.65 0.65 0.65 φ 0.28 G1 : Gate 1 S1 : Source 1 G2 : Gate 2 S2 : Source 2 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 30 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±20 15 120 PT Total Power Dissipation a 2.