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SC8380 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP index mark S2 TOP VIEW 1.98 0.02 BOTTOM VIEW 0.66 0.65 3.20 0.02 8380 Date Code 5 4 3 2 Mark area 6 7 8 1 0.61 S1 S2 S1 S2 S1 S2 G1 G2 0.65 0.65 0.65 φ 0.3 0.179 0.002 0.107 0.007 PIN6 : Source 1-1 PIN7 : Source 1-2 PIN8 : Source 1-3 PIN1 : Gate 1 PIN5 : Source 2-1 PIN4 : Source 2-2 PIN3 : Source 2-3 PIN2 : Gate 2 LAND.

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Datasheet Details

Part number SC8380
Manufacturer SamHop
File Size 113.45 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8380 Datasheet

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Full PDF Text Transcription (Reference)

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Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8380 Ver 2.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 8 @ VGS=10V 30V 9A 13 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP index mark S2 TOP VIEW 1.98 0.02 BOTTOM VIEW 0.66 0.65 3.20 0.02 8380 Date Code 5 4 3 2 Mark area 6 7 8 1 0.61 S1 S2 S1 S2 S1 S2 G1 G2 0.65 0.65 0.65 φ 0.3 0.179 0.002 0.107 0.007 PIN6 : Source 1-1 PIN7 : Source 1-2 PIN8 : Source 1-3 PIN1 : Gate 1 PIN5 : Source 2-1 PIN4 : Source 2-2 PIN3 : Source 2-3 PIN2 : Gate 2 LAND PATTERN (REFERENCE) 0.65 φ 0.3 0.65 0.65 0.