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Green Product
STS3426
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
31 @ VGS= 10V 30V 4.2A 40 @ VGS= 4.5V 52 @ VGS= 2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
SOT 26 Top View
D
D D G
1 2 3
6 5 4
D D S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 30 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 4.2 3.4 17
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.
STS3426 Datasheet
